| 摘要 |
PURPOSE: A method for manufacturing a super junction MOSFET is provided to reduce a gap between a filler and a process error by filling a deep trench by respectively laminating an impurity-doped epitaxial layer. CONSTITUTION: A second conductive epitaxial layer(102) is formed in the upper side of a first conductive silicon substrate(101). A deep trench(TD1-TD7) is formed in the second conductive epitaxial layer. An oxide layer(104) is formed in the upper side of the epitaxial layer except the deep trench. The impurity implanting process for injecting a third conductive impurity into the bottom surface of the deep trench is performed. A third conductive epitaxial layer including a third conductive impurity(105) is deposited on the entire structure to bury the deep trench. |
