发明名称 Methods of forming interconnects
摘要 Some embodiments include methods of forming interconnects. A first circuitry level may be formed, and a first dielectric region may be formed over such first level. A second level of circuitry may be formed over the first dielectric region. An interconnect may be formed to extend through such second level. A second dielectric region may be formed over the second level of circuitry, and a third level of circuitry may be formed over the second dielectric region. The third level of circuitry may be electrically connected to the first level of circuitry through the interconnect. Some embodiments include constructions having interconnects extending from a first level of circuitry, through an opening in a second level of circuitry, and to a third level of circuitry; with an individual interconnect including multiple separate electrically conductive posts.
申请公布号 US8647977(B2) 申请公布日期 2014.02.11
申请号 US201113211601 申请日期 2011.08.17
申请人 YANG MING-CHUAN;LIU ZENGTAO T.;SIPANI VISHAL;MICRON TECHNOLOGY, INC. 发明人 YANG MING-CHUAN;LIU ZENGTAO T.;SIPANI VISHAL
分类号 H01L23/48 主分类号 H01L23/48
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