| 摘要 |
A semiconductor device includes: a semiconductor substrate made of first semiconductor having a first lattice constant; an isolation region formed in the semiconductor substrate and defining active regions; a gate electrode structure formed above each of the active regions; dummy gate electrode structures disposed above a substrate surface and covering borders between one of the active regions on both sides of the gate electrode structure and the isolation region; recesses formed by etching the active regions between the gate electrode structure and dummy gate electrode structures; and semiconductor layers epitaxially grown on the recesses and made of second semiconductor having a second lattice constant different from the first lattice constant. |
