发明名称 |
Solid state imaging device, method of producing solid state imaging device, and electronic apparatus |
摘要 |
A solid state imaging device includes: a substrate; a photoelectric conversion unit that is formed on the substrate to generate and accumulate signal charges according to light quantity of incident light; a vertical transmission gate electrode that is formed to be embedded in a groove portion formed in a depth direction from one side face of the substrate according to a depth of the photoelectric conversion unit; and an overflow path that is formed on a bottom portion of the transmission gate to overflow the signal charges accumulated in the photoelectric conversion unit. |
申请公布号 |
US8648362(B2) |
申请公布日期 |
2014.02.11 |
申请号 |
US201213406706 |
申请日期 |
2012.02.28 |
申请人 |
NAKAMURA RYOSUKE;SONY CORPORATION |
发明人 |
NAKAMURA RYOSUKE |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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