发明名称 Solid state imaging device, method of producing solid state imaging device, and electronic apparatus
摘要 A solid state imaging device includes: a substrate; a photoelectric conversion unit that is formed on the substrate to generate and accumulate signal charges according to light quantity of incident light; a vertical transmission gate electrode that is formed to be embedded in a groove portion formed in a depth direction from one side face of the substrate according to a depth of the photoelectric conversion unit; and an overflow path that is formed on a bottom portion of the transmission gate to overflow the signal charges accumulated in the photoelectric conversion unit.
申请公布号 US8648362(B2) 申请公布日期 2014.02.11
申请号 US201213406706 申请日期 2012.02.28
申请人 NAKAMURA RYOSUKE;SONY CORPORATION 发明人 NAKAMURA RYOSUKE
分类号 H01L21/02 主分类号 H01L21/02
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