Multi-stack semiconductor device

摘要

A multi-stack semiconductor device comprises: a substrate; a first conductive layer, a first group of the semiconductor material layers and a second group of the semiconductor material layers. The first conductive layer is formed on the substrate scribed by laser on the bottom of the first conductive layer to form a plurality of the first scribe lines. The first group of the semiconductor material layers is formed on the first conductive layer, and the second group of the semiconductor material layers is formed on the first group of the semiconductor material layers. The first group of the semiconductor material layers and the second group of the semiconductor material layers are simultaneously scribed by laser on bottom of the first group of the semiconductor material layers to form a plurality of the second scribe lines. Each second scribe line is comprised of a plurality of the second pores. The second conductive layer is formed on the second group of the semiconductor material layers and is scribe by laser on the bottom of the first group of the semiconductor material layers to form a plurality of the third scribe lines. The second pores are shortened for shortening the horizontal distance of the first scribe lines and the second scribe lines and/or the horizontal distance of the second scribe lines and the third scribe lines.