| 摘要 |
The present invention relates to a semiconductor device and a method for fabricating the same. In particular, the present invention relates to an anti-fuse technique of a dual structure where a planar gate and a burying gate are formed. According to the present invention, the semiconductor device includes a first gate structure buried in the semiconductor substrate of a peripheral circuit region, and a second gate structure formed in the upper part of the semiconductor substrate. According to the present invention, the gate insulating layer of a program transistor is thin in order to rupture easily while at the same time, the gate insulating layer of a select transistor is thick in order to improve the reliability of the select transistor. |
