发明名称 |
DUAL WORK FUNCTION FINFET STRUCTURES AND METHODS FOR FABRICATING THE SAME |
摘要 |
A method for fabricating a dual-workfunction FinFET structure includes depositing a first workfunction material in a layer in a plurality of trenches of the FinFET structure, depositing a low-resistance material layer over the first workfunction material layer, and etching the low-resistance material layer and the first workfunction material layer from a portion of the FinFET structure. The method further includes depositing a second workfunction material in a layer in a plurality of trenches of the portion and depositing a stress material layer over the second workfunction material layer. |
申请公布号 |
US2014038402(A1) |
申请公布日期 |
2014.02.06 |
申请号 |
US201213563202 |
申请日期 |
2012.07.31 |
申请人 |
WEI ANDY C.;YANG BIN;TAMBWE FRANCIS M.;GLOBALFOUNDRIES INC. |
发明人 |
WEI ANDY C.;YANG BIN;TAMBWE FRANCIS M. |
分类号 |
H01L21/336;H01L21/311 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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