| 摘要 |
The present invention relates to a probe for a scanning capacitance microscope, which can be configured to stack a dielectric film having dielectric properties on a conductive probe to determine an amount of charges induced near the surface of a semiconductor by the amount of impurities included in the semiconductor under a constant applied voltage, if negative or positive charges are induced near the surface of the semiconductor according types of impurities doped to the semiconductor, when voltage is applied to the conductive probe with the dielectric film contacted with the semiconductor, to finally measure capacitance between the conductive probe and the semiconductor by a capacitance measuring sensor provided in the scanning capacitance microscope, thereby analyzing the types and amount of the impurities included in the semiconductor and two-dimensionally imaging a distribution state of the impurities. Thus, scanning capacitance microscope analysis can be enabled without a sample pretreatment process, thereby improving analysis speed and enhancing the testing power of the scanning capacitance microscope analysis without adding an attachment to an existing scanning capacitance microscope, or separately remodeling the existing scanning capacitance microscope. |
