发明名称 |
SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATION THEREOF WITH MIXED METAL TYPES |
摘要 |
A semiconductor structure includes a first PMOS transistor element having a gate region with a first gate metal associated with a PMOS work function and a first NMOS transistor element having a gate region with a second metal associated with a NMOS work function. The first PMOS transistor element and the first NMOS transistor element form a first CMOS device. The semiconductor structure also includes a second PMOS transistor that is formed in part by concurrent deposition with the first NMOS transistor element of the second metal associated with a NMOS work function to form a second CMOS device with different operating characteristics than the first CMOS device. |
申请公布号 |
US2014035060(A1) |
申请公布日期 |
2014.02.06 |
申请号 |
US201314046234 |
申请日期 |
2013.10.04 |
申请人 |
SUVOLTA, INC. |
发明人 |
SHIFREN LUCIAN;RANADE PUSHKAR;SONKUSALE SACHIN R. |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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