发明名称 TEMPERATURE BASED COMPENSATION DURING VERIFY OPERATIONS FOR NON-VOLATILE STORAGE
摘要 A non-volatile storage system that performs programming and reading processes. The programming process includes coarse/fine programming and verify operations. Programming is verified by testing for two different threshold voltage levels while applying the same voltage level to the control gate of a memory cell by testing for current levels through the memory cells and adjusting the current levels tested for based on current temperature such that the difference between the two effective tested threshold voltage levels remains constant over temperature variation.
申请公布号 US2014036601(A1) 申请公布日期 2014.02.06
申请号 US201314048015 申请日期 2013.10.07
申请人 SANDISK TECHNOLOGIES INC. 发明人 OOWADA KEN;DONG YINGDA;HEMINK GERRIT JAN;MUI MAN LUNG;NGUYEN HAO;LEE SEUNGPIL;PARK JONG;ZHANG FANGLIN
分类号 G11C16/34 主分类号 G11C16/34
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