| 摘要 |
PURPOSE: A nonvolatile memory device and a method for fabricating the same are provided to facilitate a charge injection process by forming a charge trapping layer made of a nanoadsorption material. CONSTITUTION: A tunnel oxide layer is formed on a semiconductor substrate. A charge trapping layer (130) has a first region and a second region. The charge trapping layer is made of a nanoadsorption material. A blocking oxide layer (140) is formed on the charge trapping layer. A gate electrode (150) is formed on the blocking oxide layer. |
