发明名称 |
NONVOLATILE MEMORY DEVICES, MEMORY SYSTEMS AND METHODS OF PERFORMING READ OPERATIONS |
摘要 |
Within a non-volatile memory device, a read operation directed to a nonvolatile memory cell having a positive threshold voltage applies a positive read voltage to a selected word line and a first control signal to a page buffer connected to a selected bit line, but if the memory cell has a negative threshold voltage the read operation applies a negative read voltage to the selected word line and a second control signal to the page buffer different from the first control signal. |
申请公布号 |
US2014036593(A1) |
申请公布日期 |
2014.02.06 |
申请号 |
US201314048944 |
申请日期 |
2013.10.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SEUNG-BUM |
分类号 |
G11C16/26 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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