| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a graphene transistor in which a graphene can be put in a state capable of controlling electric conduction by an electric field effect, a through-put in a manufacturing of a large scale integrated circuit is improved and furthermore contribution is made to an increase in an on-state current.SOLUTION: In a method for manufacturing a graphene transistor, helium ion beams in a range of 2× 10to 1×10[ions/cm] are irradiated to a graphene 12 of single layer or multiple layers formed on an insulation film 11 at a portion to be a channel region of the transistor, and then an insulation film 15 and a metal electrode 16 are laminated on the channel region of the graphene 12, thereby forming a gate structure part. |
