发明名称 METHOD FOR FABRICATING A THROUGH WIRE INTERCONNECT (TWI) ON A SEMICONDUCTOR SUBSTRATE HAVING A BONDED CONNECTION AND AN ENCAPSULATING POLYMER LAYER
摘要 A method for fabricating a through wire interconnect for a semiconductor substrate having a substrate contact includes the steps of: forming a via through the semiconductor substrate from a first side to a second side thereof; placing a wire in the via having a first end with a bonded connection to the substrate contact and a second end proximate to the second side; forming a first contact on the wire proximate to the first side; forming a second contact on the second end of the wire; and forming a polymer layer on the first side at least partially encapsulating the wire while leaving the first contact exposed.
申请公布号 US2014038406(A1) 申请公布日期 2014.02.06
申请号 US201314050535 申请日期 2013.10.10
申请人 MICRON TECHNOLOGY, INC. 发明人 HEMBREE DAVID R;WOOD ALAN G.
分类号 H01L21/768 主分类号 H01L21/768
代理机构 代理人
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