发明名称 |
METHOD FOR MANUFACTURING CMOS TRANSISTOR |
摘要 |
A CMOS transistor and a method for manufacturing the same are disclosed. A semiconductor substrate having at least a PMOS transistor and an NMOS transistor is provided. The source/drain of the PMOS transistor comprises SiGe epitaxial layer. A carbon implantation process is performed to form a carbon-doped layer in the top portion of the source/drain of the PMOS transistor. A silicide layer is formed on the source/drain. A CESL is formed on the PMOS transistor and the NMOS transistor. The formation of the carbon-doped layer is capable of preventing Ge out-diffusion. |
申请公布号 |
US2014038374(A1) |
申请公布日期 |
2014.02.06 |
申请号 |
US201314060568 |
申请日期 |
2013.10.22 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN YI-WEI;TSAI TENG-CHUN;HUANG CHIEN-CHUNG;CHEN JEI-MING;HSIAO TSAI-FU |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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