发明名称 |
Integrated Semiconductor Device and Wafer Level Method of Fabricating the Same |
摘要 |
The present disclosure provides one embodiment of a stacked semiconductor device. The stacked semiconductor device includes a first substrate; a first bond pad over the first substrate; a second substrate including a second electrical device fabricated thereon; a second bond pad over the second electrical device over the second substrate, the second bond pad electrically connecting to the second electrical device; a second insulation layer over the second bond pad having a top surface, the second insulation layer being bonded toward the first bond pad of the first substrate; and a through-substrate-via ("TSV") extending from a surface opposite to the first bond pad through the first substrate and through the top surface of the second insulation layer to the second bond pad. |
申请公布号 |
US2014035158(A1) |
申请公布日期 |
2014.02.06 |
申请号 |
US201313773224 |
申请日期 |
2013.02.21 |
申请人 |
MANUFACTURING COMPANY, LTD. TAIWAN SEMICONDUCTOR;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG KUEI-SUNG;CHENG CHUN-WEN;KALNITSKY ALEX;CHU CHIA-HUA |
分类号 |
H01L23/48;H01L23/00 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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