| 摘要 |
<p>Provided are a variable resistance memory device and a manufacturing method thereof. The variable resistance memory device comprises a plurality of first conductive lines, a plurality of second conductive lines, an insulation layer, and a variable resistance material layer. A plurality of first conductive lines is extended to a first direction. A plurality of second conductive lines is arranged on the upper part or the lower part of the first conductive lines and is extended to a second direction. The insulation layer is arranged between the first conductive line and the second conductive line, is extended to the second direction, and comprises, and a trench which is defined by first and second sides which are faced to each other and a lower surface which connects the first and second sides. The variable resistance material layer is formed along the first and second sides and the lower surface of the trench. The first and second sides of the trench are overlapped with two second conductive lines which are adjacent to each other.</p> |
