| 摘要 |
The present disclosure relates to a semiconductor light emitting device and a manufacturing method thereof, comprising: a plurality of semiconductor layers having a growth substrate-removed surface on a first semiconductor layer; a support substrate having a first electrical passage and a second electrical passage and connecting the first electrical passage and the second electrical passage from a second surface to a first surface; a bonded layer bonding a side of a second semiconductor layer, among the semiconductor layers, with the first surface side of the support substrate and electrically connected to the first electrical passage; a bonded layer-removed surface formed on the first surface, making the second electrical passage exposed, and opened toward the semiconductor layers; and an electrical connection for connecting the exposed second electrical passage of the bonded layer-removed surface to the semiconductor layers to supply electrons or holes for the semiconductor layers. |
