| 摘要 |
Stress barrier structures for semiconductor chips, and methods of fabrication thereof are described. In one embodiment, the semiconductor device includes a semiconductor substrate that includes active circuitry and an interconnect metallization structure over the active circuitry, wherein the interconnect metallization structure includes a layer of low-k insulating layer. A first metal bump is disposed over the semiconductor substrate and coupled to the active circuitry of the semiconductor substrate. A first stress barrier structure is disposed under the metal bump, and disposed over the low-k insulating layer, and a second substrate is disposed over the first metal bump. |
