发明名称 |
Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device |
摘要 |
To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the silicon layer is not provided. |
申请公布号 |
US8643009(B2) |
申请公布日期 |
2014.02.04 |
申请号 |
US201213602393 |
申请日期 |
2012.09.04 |
申请人 |
SAKATA JUNICHIRO;GODO HIROMICHI;SHIMAZU TAKASHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SAKATA JUNICHIRO;GODO HIROMICHI;SHIMAZU TAKASHI |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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