发明名称 |
Method of making an insulated gate semiconductor device and structure |
摘要 |
In one embodiment, a trench shield electrode layer is separated from a trench gate electrode by an inter-electrode dielectric layer. A conformal deposited dielectric layer is formed as part of a gate dielectric structure and further isolates the trench shield electrode from the trench gate electrode. The conformal deposited dielectric layer is formed using an improved high temperature oxide (HTO) low pressure chemical vapor deposition (LPCVD) process. |
申请公布号 |
US8642425(B2) |
申请公布日期 |
2014.02.04 |
申请号 |
US201213482920 |
申请日期 |
2012.05.29 |
申请人 |
BURKE PETER A.;AMEELE ERIC J.;SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
BURKE PETER A.;AMEELE ERIC J. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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