| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion device with high photoelectric conversion efficiency.SOLUTION: A method for manufacturing a photoelectric conversion device 11 comprises the steps of: forming an electrode layer 2 containing at least one of Sb and Bi and Mo on a substrate 1; forming a film containing a group I-B element and a group III-B element on the electrode layer 2; and converting the film into a photoelectric conversion layer 3 containing a group I-III-VI compound doped with at least one of Sb and Bi by heating the film in an atmosphere containing a chalcogen element. |
