发明名称 |
SEMICONDUCTOR SUBSTRATE WITH METALLIC PLATING FILM, AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate having a metallic plating film excellent in adhesion with respect to a semiconductor substrate, and to provide a method for manufacturing the same.SOLUTION: The method for manufacturing the semiconductor substrate having the metallic plating film by applying a metallic plating to a semiconductor substrate includes: bringing the semiconductor substrate into contact with a fluorine gas under reduced pressure of 0.1-60 kPa by using the fluorine gas with a purity of 70% or more; and bringing the semiconductor element into contact with an aqueous medium, and then applying a metallic plating to the semiconductor substrate. |
申请公布号 |
JP2014019933(A) |
申请公布日期 |
2014.02.03 |
申请号 |
JP20120162165 |
申请日期 |
2012.07.21 |
申请人 |
UNIV OF FUKUI;KIYOKAWA MEKKI KOGYO KK |
发明人 |
YONEZAWA SUSUMU;TAKASHIMA MASAYUKI;KIM JAE-HO;NATSUME KOSHIRO;KIYOKAWA HAJIME |
分类号 |
C23C18/18 |
主分类号 |
C23C18/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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