发明名称 SEMICONDUCTOR SUBSTRATE WITH METALLIC PLATING FILM, AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor substrate having a metallic plating film excellent in adhesion with respect to a semiconductor substrate, and to provide a method for manufacturing the same.SOLUTION: The method for manufacturing the semiconductor substrate having the metallic plating film by applying a metallic plating to a semiconductor substrate includes: bringing the semiconductor substrate into contact with a fluorine gas under reduced pressure of 0.1-60 kPa by using the fluorine gas with a purity of 70% or more; and bringing the semiconductor element into contact with an aqueous medium, and then applying a metallic plating to the semiconductor substrate.
申请公布号 JP2014019933(A) 申请公布日期 2014.02.03
申请号 JP20120162165 申请日期 2012.07.21
申请人 UNIV OF FUKUI;KIYOKAWA MEKKI KOGYO KK 发明人 YONEZAWA SUSUMU;TAKASHIMA MASAYUKI;KIM JAE-HO;NATSUME KOSHIRO;KIYOKAWA HAJIME
分类号 C23C18/18 主分类号 C23C18/18
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