| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN based device manufacturing method and an AIN film deposition process capable of forming a buffer layer which can maintain the high film characteristic of a GaN based material layer by a film deposition process different from the MOCVD process.SOLUTION: A GaN based device manufacturing method in one embodiment of the invention involves sputtering an aluminum target by using a gas consisting of nitrogen, with oxygen added thereto at a flow rate of 0.1 [sccm] or less, as the sputtering gas, whereby an aluminum nitride layer (buffer layer) 2 having aluminum polarity is formed on a substrate 1 and a gallium nitride based material layer 3 is formed on top of the aluminum nitride layer 2. |
