发明名称 ELECTROCHEMICAL DEVICE FABRICATION PROCESS WITH LOW TEMPERATURE ANNEAL
摘要 A method of manufacturing an electrochemical device may comprise: depositing an electrode layer over a substrate using a physical vapor deposition (PVD) process in a deposition chamber, wherein the chamber pressure is greater than about 10 mTorr, and the substrate temperature is between about room temperature and about 450° C. or higher; and annealing the electrode layer for crystallizing the electrode layer, wherein the annealing temperature is less than or equal to about 450° C. Furthermore, the chamber pressure may be as high as 100 mTorr. Yet furthermore, the post-deposition annealing temperature may be less than or equal to 400° C. The electrochemical device may be a thin film battery with a LiCoO2 electrode and the PVD process may be a sputter deposition process.
申请公布号 US2014030449(A1) 申请公布日期 2014.01.30
申请号 US201313951702 申请日期 2013.07.26
申请人 APPLIED MATERIALS, INC. 发明人 SONG DAOYING;JIANG CHONG;KWAK BYUNG-SUNG LEO;SEVERIN DANIEL
分类号 H01M10/04 主分类号 H01M10/04
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