| 摘要 |
A method for preparing a device, the method comprising: forming a first device layer over a first electrode, the layer comprising a metal oxide formed from a sol-gel composition that does not generate acidic by-products, and forming a second electrode over the first device layer, wherein the method further includes forming a layer comprising quantum dots over the first electrode before or after formation of the first device layer. Also disclosed is a device comprising a first device layer formed over a first electrode, the first device layer comprising a metal oxide formed by sol-gel processing that does not include acidic by-products, a second electrode over the first device layer, and a layer comprising quantum dots disposed between the first device layer and one of the two electrodes. A device prepared by the method is also disclosed. |
