| 摘要 |
PROBLEM TO BE SOLVED: To connect a plurality of transistors with each other without using a common contact in a case that the plurality of transistors are adjacently arranged.SOLUTION: A third diffusion layer SD3 is partially located next to a second gate electrode GT2 in a first direction (a x direction in a figure), and is overlapped with the second gate electrode GT2 in a second direction (a y direction in the figure) orthogonal to the first direction. A first lower layer wire INC11 is overlapped with at least one of a first gate electrode GT1 and the second gate electrode GT2, and with a first diffusion layer in a plan view, and extends in the first direction (the x direction). A first contact CON1 connects the first lower layer wire INC11 with the first gate electrode GT1 and the second gate electrode GT2. A second contact CON2 connects the first lower layer wire INC11 with the third diffusion layer SD3. |
