| 摘要 |
A lateral-diffused-metal-oxide-semiconductor device having improved safe-operating-area is provided. The LDMOS device includes spaced-apart source and drain, separated by a first insulated gate structure, and spaced-apart source and body contact The spaced-apart source and BC are part of the emitter-base circuit of a parasitic bipolar transistor that can turn on prematurely, thereby degrading the SOA of prior art four-terminal LDMOS devices. Rather than separating the source and BC with a shallow-trench-isolation region as in the prior art, the semiconductor surface in the gap between the spaced-apart source and BC has there-over a second insulated gate structure, with its gate conductor electrically tied to the BC. When biased, the second insulated gate structure couples the source and BC lowering the parasitic resistance in the emitter-base circuit, thereby delaying turn-on of the parasitic transistor and improving the SOA of such 4-T LDMOS devices. |
