| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a resist pattern capable of producing a resist pattern at a sufficiently wide focus margin (DOF).SOLUTION: The method for producing a resist pattern comprises the following stages (1) to (5): a step (1) of coating the surface of a substrate with a resist composition comprising (A) a resin having the first structural unit expressed by formula (I) [where, Al denotes a single bond,*-A2-O-,*--A2-CO-O- or the like; and A2 denotes a 1 to 6C alkanediyl group] and the second structural unit having an acid unstable group in the molecule; (B) an acid generator; and (D) a solvent; a step (2) of drying the resist composition after coating to form a composition layer; a step (3)of exposing light to the composition layer; a step (4) of heating the composition layer after the exposure; and a step (5) of developing the composition layer after the heating with a negative type developer. |
