METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

摘要

A method for manufacturing a silicon carbide substrate according to the present invention has the following steps. A portion of a silicon carbide raw material (8) is sublimated. After the portion of the silicon carbide raw material (8) is sublimated, a seed substrate (1) having a principal surface (1A) is placed in a growth container (10). A silicon carbide crystal (11) is grown on the principal surface (1A) of the seed substrate (1) by sublimating the remainder of the silicon carbide raw material (8) in the growth container (10). It is thereby possible to provide a method for manufacturing a silicon carbide substrate having minimal dislocation, in which an increase in dislocation at the principal surface (1A) of the seed substrate (1) is suppressed.