| 摘要 |
<p>A high electron mobility transistor (HEMT) and a method for manufacturing the same are disclosed. The disclosed HEMT may include a semiconductor layer, a mask layer having an opening on the semiconductor layer, and a depletion forming layer prepared on the semiconductor layer exposed by the opening. The depletion forming layer may be a layer of forming a depletion area in two-dimensional electron gas (2DEG) of the semiconductor layer. In the semiconductor layer, a recess area may be formed. The opening of the mask layer may expose at least a part of the recess area. The mask layer may cover the upper surface of the semiconductor layer and the inner side of the recess area, or the mask layer may cover the upper surface of the semiconductor layer, the inner side of the recess area, and a part of the bottom of the recess area.</p> |
