Process for plasma treating an isolation layer with low permittivity
摘要
The present invention is related to the use of a dry etch plasma in order to seal the side walls of an opening created in a substrate comprising at least a low-k material layer, thereby maintaining the local low k-value in said low-k material layer. The present invention is also related to a process for forming a semiconductor substrate.
申请公布号
EP1195801(B1)
申请公布日期
2014.01.29
申请号
EP20010870205
申请日期
2001.09.28
申请人
IMEC;APPLIED MATERIALS, INC.
发明人
BAKLANOV, MICHAEL R.;VANHAELEMEERSCH, SERGE;MAEX, KAREN A.;DONATON, RICARDO;SCHAEKERS, MARC;STRUYF, HERBERT