发明名称
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a minute pattern measuring method which precisely measures trails of the bottom part of a minute structure pattern by using a CD-SEM; and to provide a minute pattern measuring device. <P>SOLUTION: In the minute pattern measuring method, an image of a minute pattern of a photomask is obtained, and the image is processed to generate a signal profile, and the signal profile is processed to generate a differential profile. Then, a differential peak value of the minute pattern is computed from the differential profile to compute the trailing of the bottom part of the minute pattern. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP5402458(B2) 申请公布日期 2014.01.29
申请号 JP20090218760 申请日期 2009.09.24
申请人 发明人
分类号 G03F1/86;G03F1/84;H01L21/027 主分类号 G03F1/86
代理机构 代理人
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