THIN FILM FORMATION DEVICE AND SEMICONDUCTOR FILM MANUFACTURING METHOD

摘要

Included are a vacuum chamber 10 having a substrate stage 12 that holds a substrate 100 and a plasma electrode 13 that is provided so as to face the substrate 100, a H 2 gas supply unit that supplies a H 2 gas to the vacuum chamber 10 at a constant flow rate during deposition, a SiH 4 gas supply unit that opens or closes a gas valve 25 to turn on or off the supply of a SiH 4 gas to the vacuum chamber 10 during deposition, a high-frequency power source 40 that applies a high frequency voltage to the plasma electrode 13, a shield box 20 that is connected to the ground so as to surround the plasma electrode 13 outside the vacuum chamber 10, and a control unit 60 that controls the opening or closing of the gas valve 25 such that the SiH 4 gas is periodically supplied to the vacuum chamber 10 and modulates the amplitude of high frequency power supplied to the plasma electrode 13 in synchronization with the opening or closing of the gas valve 25, and the gas valve 25 is provided in the shield box 20.