BUFFER LAYER FORMED MG-SI BASE THERMOELECTRIC MATERIALS

摘要

The present invention relates to an Mg-Si based thermoelectric element having a buffer layer. It includes a thermoelectric material layer formed of an Mg-Si based thermoelectric material composed of Mg2X(X is Si or a mixed element mixed with an element selected from Si, Sn, Ge, and Pb), an electrode material layer formed on both sides of the thermoelectric material layer and formed of an electrode material composed of an element among transition metal aluminum, and a buffer layer formed by making a ratio of the thermoelectric material and the electrode material 9:1-1:9, mixing the thermoelectric material and the electrode material, and formed between the thermoelectric material layer and the electrode material layer. The thermoelectric material layer is attached to the electrode material layer and a technical point is the Mg-Si based thermoelectric element having the buffer layer formed by thermally processing and pressurizing it at pressure of 10-500 MPa. According to this, An excellent attachment interface, not having the separation of an attachment interface or the generation of a crack when two materials are attached to each other, is formed through pressurizing and thermal processing while forming the buffer layer between the Mg-Si based thermoelectric material and the transition metal material.