发明名称 |
TFET based 4T memory devices |
摘要 |
A four transistor (4T) memory device is provided. The device includes a first cell transistor and a second cell transistor, the first and second cell transistors coupled to each other and defining latch circuitry having at least one multi-stable node. The device further includes a first access transistor and a second access transistor, the first and second access transistors coupling the at least one multi-stable node to at least one bit-line. In the device, each of the first and second cell transistors and each of the first and second access transistors is a unidirectional field effect transistor configured for conducting current in a first direction and to be insubstantially incapable of conducting current in a second direction. |
申请公布号 |
US8638591(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US201113153027 |
申请日期 |
2011.06.03 |
申请人 |
SARIPALLI VINAY;MOHATA DHEERAJ;MOOKHERJEA SAURABH;DATTA SUMAN;NARAYANAN VIJAYKRISHNAN;THE PENN STATE RESEARCH FOUNDATION |
发明人 |
SARIPALLI VINAY;MOHATA DHEERAJ;MOOKHERJEA SAURABH;DATTA SUMAN;NARAYANAN VIJAYKRISHNAN |
分类号 |
G11C5/06;G11C11/41;G11C11/412 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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