发明名称 |
Metrology for GST film thickness and phase |
摘要 |
Methods of determining thickness and phase of a GST layer on a semiconductor substrate are described using intensity spectra within the infra-red range. In particular, techniques for using certain transmission at certain frequencies are disclosed for faster thickness and phase determination in an in-line or standalone metrology/monitoring system for CMP processes. |
申请公布号 |
US8639377(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US20080267526 |
申请日期 |
2008.11.07 |
申请人 |
XU KUN;LIU FENG Q;WANG YUCHUN;RAVID ABRAHAM;TU WEN-CHIANG;APPLIED MATERIALS, INC. |
发明人 |
XU KUN;LIU FENG Q;WANG YUCHUN;RAVID ABRAHAM;TU WEN-CHIANG |
分类号 |
G06F19/00;F04B19/16;F04D23/00;F04D27/02 |
主分类号 |
G06F19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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