| 摘要 |
A patterned substrate for epitaxially growing a semiconductor material includes: a top surface; and a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and is defined by n crystal planes, n being an integer not less than 3. Each of the crystal planes has an upper edge meeting the top surface and is adapted for epitaxially growing the semiconductor material. A maximum distance from one of the upper edges of one of the recesses to an adjacent one of the upper edges of an adjacent one of the recesses is not greater than 500 nm. |
