MAGNETIC DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A magnetic device includes a magnetic resistive element and a memory cell which includes a bottom electrode and a top electrode which are arranged by interposing the magnetic resistive element. The magnetic resistive element is in contact with the bottom electrode and includes a buffer layer which controls a crystal axis to induce perpendicular magnetic anisotropy in the magnetic resistive element, a seed layer which is in contact with the buffer layer and is oriented on a hcp (0001) crystal surface, and a perpendicular magnetization fixed layer which is in contact with the seed layer and includes an L1_1 type atom rule structure.