| 发明名称 |
Locally tailoring chemical mechanical polishing (CMP) polish rate for dielectrics |
| 摘要 |
A method of manufacturing a semiconductor structure includes varying local chemical mechanical polishing (CMP) abrading rates of an insulator film by selectively varying a carbon content of the insulator film. |
| 申请公布号 |
US8637403(B2) |
申请公布日期 |
2014.01.28 |
| 申请号 |
US201113323093 |
申请日期 |
2011.12.12 |
| 申请人 |
AMOAH YOBA;BATES GRAHAM M.;HASSELBACH JOSEPH P.;MCDEVITT THOMAS L.;SHAH EVA A.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AMOAH YOBA;BATES GRAHAM M.;HASSELBACH JOSEPH P.;MCDEVITT THOMAS L.;SHAH EVA A. |
| 分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
