发明名称 |
Resistance based memory having two-diode access device |
摘要 |
A resistance-based memory has a two-diode access device. In a particular embodiment, a method includes biasing a bit line and a sense line to generate a current through a resistance-based memory element via a first diode or a second diode. A cathode of the first diode is coupled to the bit line and an anode of the second diode is coupled to the sense line. |
申请公布号 |
US8638590(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US20100892237 |
申请日期 |
2010.09.28 |
申请人 |
HAO WUYANG;SUH JUNGWON;LEE KANGHO;KIM TAE HYUN;KIM JUNG PILL;KANG SEUNG H.;QUALCOMM INCORPORATED |
发明人 |
HAO WUYANG;SUH JUNGWON;LEE KANGHO;KIM TAE HYUN;KIM JUNG PILL;KANG SEUNG H. |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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