SEMICONDUCTOR LIGHT EMITTING DEVICE WITH DOPED BUFFER LAYER AND MANUFACTURING METHOD OF THE SAME

摘要

Disclosed is a semiconductor light emitting device including a doped buffer layer. The disclosed semiconductor light emitting device forms a doping layer including a dopant inside the buffer layer formed with an AlN therefore the present invention can induce prevention of crystal defects in an inner part of the buffer layer and growth substrate uniformity formed thereon; and improve crystallinity of the nitride semiconductor layer generated on the upper part.