METHOD OF MAKING FIELD EFFECT TYPE COMPOUND SEMICONDUCTOR DEVICE

摘要

The present invention relates to a method for manufacturing a high performance field effect type compound semiconductor device in which a leakage current is decreased and breakdown voltage is improved. The method for manufacturing field effect type compound semiconductor device comprises the following steps of: stacking an active layer and an ohmic layer on a substrate and forming a first oxide layer on the ohmic layer; forming a mesa area vertically in predetermined areas of the first oxide layer, ohmic layer, and active layer; flattening the mesa area after forming a nitride layer by depositing a nitride film on the mesa area; forming an ohmic electrode on the first oxide layer; forming a macro-gate pattern having an under-cut shaped profile by forming a second oxide layer on the semiconductor substrate on which the ohmic electrode is formed, forming a micro-gate resist pattern, and performing dry-etching for three insulating layers including the first oxide layer, nitride layer, and second oxide layer; forming a gate recess area by applying a copolymer resist over the semiconductor substrate on which the micro-gate pattern is formed and forming a head pattern of a gamma gate electrode; and forming a gamma gate electrode by depositing a refractory metal on the semiconductor substrate on which the gate recess area is formed.