| 摘要 |
The present invention relates to a semiconductor device and a method for fabricating the same. Especially, the present invention relates to a technique capable of preventing the collapse of a storage node by forming a multilayer structure where a nitride floating capacitor (NFC) connected to another storage node. The semiconductor device includes storage nodes formed on a semiconductor substrate including a lower structure, a multi support layer patter of a multilayered type formed between the storage nodes. Each NFC pattern among the multi NFC patterns has a different type. |
