发明名称 SEMICONDUCTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME
摘要 A semiconductor substrate is provided, including: a substrate; a plurality of conductive through vias embedded in the substrate; a first dielectric layer formed on the substrate; a metal layer formed on the first dielectric layer; and a second dielectric layer formed on the metal layer. As such, when a packaging substrate is disposed on the second dielectric layer, the metal layer provides a reverse stress to balance thermal stresses caused by the first and second dielectric layers, thereby preventing warpage of the semiconductor substrate.
申请公布号 US2014021617(A1) 申请公布日期 2014.01.23
申请号 US201213677939 申请日期 2012.11.15
申请人 INDUSTRIES CO., LTD. SILICONWARE PRECISION;SILICONWARE PRECISION INDUSTRIES CO., LTD. 发明人 LU CHUN-HUNG;YUAN CHUNG-TE;MA GUANG-HWA
分类号 H01L23/522;H01L21/768 主分类号 H01L23/522
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