发明名称 |
SEMICONDUCTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME |
摘要 |
A semiconductor substrate is provided, including: a substrate; a plurality of conductive through vias embedded in the substrate; a first dielectric layer formed on the substrate; a metal layer formed on the first dielectric layer; and a second dielectric layer formed on the metal layer. As such, when a packaging substrate is disposed on the second dielectric layer, the metal layer provides a reverse stress to balance thermal stresses caused by the first and second dielectric layers, thereby preventing warpage of the semiconductor substrate. |
申请公布号 |
US2014021617(A1) |
申请公布日期 |
2014.01.23 |
申请号 |
US201213677939 |
申请日期 |
2012.11.15 |
申请人 |
INDUSTRIES CO., LTD. SILICONWARE PRECISION;SILICONWARE PRECISION INDUSTRIES CO., LTD. |
发明人 |
LU CHUN-HUNG;YUAN CHUNG-TE;MA GUANG-HWA |
分类号 |
H01L23/522;H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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