SEMICONDUCTOR DEVICE FABRICATION METHOD

摘要

Provided is a semiconductor device fabrication method. The method comprises the following steps: forming a gate stack structure (2) on a substrate (1); etching the substrate (1) at the both side of the gate stack structure (2), and forming a C-shaped source-drain groove (1B); and wet etching the C-shaped source-drain groove (1C), and forming a∑-shaped source-drain groove (1B). The method effectively increases the stress of the channel region and precisely controls the depth of the source-drain groove, decreases the defects, reduces the roughness of the side wall and the bottom of the groove and improves the performance of the device.