Forming Light-Emitting Diodes Using Seed Particles

摘要

A seed layer for growing a group 111-V semiconductor structure 1s embedded in a dielectric material on a carrier substrate. After the group 111-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group 111-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.