| 摘要 |
<p>A bottom electrode (2) is provided with a conductive substrate (2a), an electrostatic chuck (6), a focus ring (5), and a conductive sprayed film (100). High-frequency power is applied to the conductive substrate (2a). The electrostatic chuck (6) has an insulating layer (6b) covering an electrode (6a) provided on the top surface of the substrate (2a), and electrostatically attracts a semiconductor wafer (W), which is to be plasma treated, to the insulating layer (6b). The focus ring (5) is arranged so as to surround the periphery of the semiconductor wafer (W) on the top surface of the insulating layer (6b) of the electrostatic chuck (6). The conductive sprayed film (100) is arranged in the portion of the insulating layer (6b) of the electrostatic chuck (6) that is sandwiched by the focus ring (5) and the substrate (2a), titania being formed on the insulating material using a synthetic material blended at a predetermined ratio by weight.</p> |
