METHOD FOR MANUFACTURING FIELD STOP IGBT

摘要

A method for manufacturing a field stop insulated-gate bipolar transistor (FS-IGBT), related to the technical field of IGBT. The method comprises the steps of: providing a chip having formed basically the front-side structure of the FS-IGBT; depositing a front-side protective layer (150) on the front-side structure of the chip; flipping the chip to make the rear side thereof to face a front-side implanter, and using the front-side implanter to perform an ion implantation doping on an FS layer of the rear side of the chip to form a collector layer (130); and, removing the front-side protective layer (150). In the manufacturing method, the front-side implanter can be used to implement the ion implantation of the collector layer, thus facilitating same to be compatible with a previous processing line, and allowing the front-side structure of the FS-IGBT to be provided with effective protection, thereby allowing for great yield and reliability of the FS-IGBT.