发明名称 ENHANCED MOBILITY FIELD-EFFECT TRANSISTORS BASED ON POLYMER FILM CONTAINING INORGANIC NANOPARTICLES
摘要 The present invention relates to the field of organic and polymer electronics, more specifically it is related to the field of organic enhanced mobility devices, in particular, to the field of organic enhanced mobility transistors and manufacturing methods thereof. An organic field-effect transistor having an active layer made of organic semiconductor - inorganic semiconductor nanoparticles composite film and manufacturing methods thereof. The organic field-effect transistor includes a gate electrode formed on one side of a substrate; an insulating film formed on upper surface portions of the gate electrode, spaced apart from each other; the first and the second electrodes layered on upper surface portions of the insulating film in a predetermined pattern; a composite: organic semiconductor-inorganic semiconductor nanoparticles thin film layer coated on an upper surface of a portion of the first and the second electrodes and the insulating thin film. High field-effect mobility values are achieved by combining two types of materials in one active layer of the device: soluble semiconductor polymer and inorganic semiconductor nanoparticles which properties including the field-effect mobility can be controlled by the concentration of the inorganic semiconductor nanoparticles and by applied electric field.
申请公布号 WO2014014375(A1) 申请公布日期 2014.01.23
申请号 WO2012RU00586 申请日期 2012.07.19
申请人 OPTOGAN ORGANIC LIGHTNING SOLUTIONS, LIMITED LIABILITY COMPANY;ALESHIN, ANDREY NIKOLAEVICH;BYCHKOVSKII, DENIS NIKOLAEVICH;KOVSH, ALEXEY RUSLANOVICH;BOUGROV, VLADISLAV EVGENJEVICH;ODNOBLYUDOV, MAXIM ANATOLIEVICH 发明人 ALESHIN, ANDREY NIKOLAEVICH;BYCHKOVSKII, DENIS NIKOLAEVICH;KOVSH, ALEXEY RUSLANOVICH;BOUGROV, VLADISLAV EVGENJEVICH;ODNOBLYUDOV, MAXIM ANATOLIEVICH
分类号 H01L51/46;B82Y40/00 主分类号 H01L51/46
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